Researchers from Korea's Daegu Gyeongbuk Institute of Science and Technology (DGIST) discovered the formation of valley domain, which can expand valleytronics technology.

Formation of valley domain in molybden disulphide (DGIST)

The researchers say that they have solved the stability problem inherent in valley spin in valleytronics devices by discovering the formation of valley domain in 2D molybdenum disulfide (MoS2). The team identified that a valley domain formed in an extreme nano structure can be used to store information in place of spin.

Moreover, the research team discovered that they can generate anomalous transverse current by controlling the size of valley domain. Anomalous transverse current occurs inevitably due to the movement of a domain wall and flows toward only one direction along to the movement of valley domain. They also proposed and showed the applicability of a diode mechanism, a single crystal nanostructure substance that is unlike the existing semiconductor diode of heterostructure.

Source: 
Tags: