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Recent Valleytronics News

Researchers show it is possible to realize a valleytronics device in pristine graphene

Researchers from Germany (Max-Born Institute) and India (IIT Bombay) have shown that it is possible to realize a valleytronics device in pristine graphene.

Reading and writing valley-selective electron excitations in graphene (image)

Graphene (and other graphene-like systems) feature an extra degree of electron freedom, or valley pseudo-spin. This has interesting potential in valleytronics applications, but the implementation of valleytronics ideas has been so far limited to gapped graphene-like semiconducting 2D materials, most commonly transition metal dichalcogenides, and has never been attempted in pristine graphene, because graphene monolayers have zero bandgap, zero Berry curvature, and thus nearly identical valleys,.

Read the full story Posted: Jul 19,2021

Researchers demonstrate how few-cycle linearly polarized pulses can induce a high degree of valley polarization

Scientists from several research institutes in Germany and the UK have demonstrated that few-cycle linearly polarized pulses can induce a high degree of valley polarization.

few-cycle linearly polarized pulses can induce a high degree of valley polarization

The mechanism to induce such polarization does not rely on the optical selection rules, and therefore can be in principle used in inversion symmetric materials, such as TMD bilayers or graphene. This could enable the design of ultrafast valleytronic devices.

Read the full story Posted: Feb 26,2021

Researchers have demonstrated electrical valley control in 3D dual-gate diamond field-effect transistors

Researchers from Sweden's Uppsala university and from UK's Element Six have demonstrated electrical valley control in 3D dual-gate diamond field-effect transistors.

Electron density in different valleys after electron injection in a dual-gate valleytronic transistor (Uppsala university)

The team has fabricated valley transistors on single-crystalline diamond plates with ultra-low nitrogen impurity concentrations. A dual-gate configuration was used to gain a high degree of freedom of the control of the valley currents. The control of location and time of the valley-polarized currents was achieved by adding multiple drain electrodes.

Read the full story Posted: Feb 21,2021

A 2D derivative of perovskite could hold the key for future valleytronics devices

Researchers from Rice University and Texas A&M University have discovered that a 2D derivative of perovskite has a good potential for valleytronics applications.

The researchers synthesized a layered compound of cesium, bismuth and iodine that is able to store the valley states of electrons, but only in the structure's odd layers. These bits can be set with polarized light, and the even layers appear to protect the odd ones from the kind of field interference that bedevils other perovskites, according to the researchers.

Read the full story Posted: Oct 27,2020

Researchers observe light emission from intervalley excitons for the first time

Researchers from the University of California, Riverside, has observed light emission intervalley transmissions. The researchers say that this light emission can be used to read valley information from Valleytronics devices in the future.

The researhers observed the phenomenon in monolayer tungsten diselenide (WSe2) - a promising valleytronic material that possesses two valleys with opposite dynamic characteristics in the band structure, and can interact strongly with light.

Read the full story Posted: May 16,2020