Researchers from Germany (Max-Born Institute) and India (IIT Bombay) have shown that it is possible to realize a valleytronics device in pristine graphene.

Graphene (and other graphene-like systems) feature an extra degree of electron freedom, or valley pseudo-spin. This has interesting potential in valleytronics applications, but the implementation of valleytronics ideas has been so far limited to gapped graphene-like semiconducting 2D materials, most commonly transition metal dichalcogenides, and has never been attempted in pristine graphene, because graphene monolayers have zero bandgap, zero Berry curvature, and thus nearly identical valleys,.

Scientists from several research institutes in Germany and the UK have demonstrated that few-cycle linearly polarized pulses can induce a high degree of valley polarization.

The mechanism to induce such polarization does not rely on the optical selection rules, and therefore can be in principle used in inversion symmetric materials, such as TMD bilayers or graphene. This could enable the design of ultrafast valleytronic devices.

Researchers from Sweden's Uppsala university and from UK's Element Six have demonstrated electrical valley control in 3D dual-gate diamond field-effect transistors.

The team has fabricated valley transistors on single-crystalline diamond plates with ultra-low nitrogen impurity concentrations. A dual-gate configuration was used to gain a high degree of freedom of the control of the valley currents. The control of location and time of the valley-polarized currents was achieved by adding multiple drain electrodes.

Researchers from ETH Zurich and Aalto University showed that sandwiching two slightly rotated layers of graphene between a ferromagnetic insulator provides a unique setting for new electronic states.

Researchers from Rice University and Texas A&M University have discovered that a 2D derivative of perovskite has a good potential for valleytronics applications.

The researchers synthesized a layered compound of cesium, bismuth and iodine that is able to store the valley states of electrons, but only in the structure's odd layers. These bits can be set with polarized light, and the even layers appear to protect the odd ones from the kind of field interference that bedevils other perovskites, according to the researchers.

Researchers from Cornell University managed to control the valley (orbital angular momentum) of electrons in a material by using electrical inputs to manipulate the magnetism of an adjacent material.

Researchers from Fusain University and the Chinese National University of Defense Technology demonstrated that 2D all-dielectric PhC slabs without in-plane inversion symmetry can be used to efficiently separate valley exciton emission of a 2D WS2 monolayer in the far field at room temperature.

Researchers from the University of California, Riverside, has observed light emission intervalley transmissions. The researchers say that this light emission can be used to read valley information from Valleytronics devices in the future.

The researhers observed the phenomenon in monolayer tungsten diselenide (WSe2) - a promising valleytronic material that possesses two valleys with opposite dynamic characteristics in the band structure, and can interact strongly with light.

Researchers from the University of Groningen managed to produce valley-coherent photoluminescence at room temperatures - by using a silver sawatooth nanoslit array in two-dimensional tungsten disulfide flakes.

Researchers from the University of California, Riverside,have developed a new method to read the valley indices of the dark excitons and trions. The researchers used monolayer (2D) tungsten diselenide (WSe2), a semiconductor with two distinct electronic valleys.The material hosts bright and dark excitons or trions with different spin configurations.