Researchers observe light emission from intervalley excitons for the first time

Researchers from the University of California, Riverside, has observed light emission intervalley transmissions. The researchers say that this light emission can be used to read valley information from Valleytronics devices in the future.

The researhers observed the phenomenon in monolayer tungsten diselenide (WSe2) - a promising valleytronic material that possesses two valleys with opposite dynamic characteristics in the band structure, and can interact strongly with light.

Researchers use a silver sawtooth nanoslit array to produce valley-coherent photoluminescence

Researchers from the University of Groningen managed to produce valley-coherent photoluminescence at room temperatures - by using a silver sawatooth nanoslit array in two-dimensional tungsten disulfide flakes.

Silver sawtooth nanoslit creates valley-coherent photoluminescence in 2D tungsten-disulfide (Groningen)

So-called "coherent light" can be used to store or transfer information in quantum electronics, and the researchers say that their plasmon-exciton hybrid device model may be promising for future integrated nanophotonics applications.

Researchers develop a method to read the valley indices of dark excitons and trions

Researchers from the University of California, Riverside,have developed a new method to read the valley indices of the dark excitons and trions. The researchers used monolayer (2D) tungsten diselenide (WSe2), a semiconductor with two distinct electronic valleys.The material hosts bright and dark excitons or trions with different spin configurations.

The researchers say that dark excitons and trions in monolayer WSe2 have much longer lifetime and better valley stability than the common bright excitons and trions - which makes them excellent candidates for valleytronic applications. But up until now there was no method to read the valley indices of the dark excitons and trions because their light emission from either valley has exactly the same energy and polarization. By identifying a measurable physical quantity that can distinguish the two valley indices of dark excitons and trions, the team was able to devise a method to read the valley indices.

Researchers discover the formation of valley domain, potentially expand valleytronics technology

Researchers from Korea's Daegu Gyeongbuk Institute of Science and Technology (DGIST) discovered the formation of valley domain, which can expand valleytronics technology.

Formation of valley domain in molybden disulphide (DGIST)

The researchers say that they have solved the stability problem inherent in valley spin in valleytronics devices by discovering the formation of valley domain in 2D molybdenum disulfide (MoS2). The team identified that a valley domain formed in an extreme nano structure can be used to store information in place of spin.

EPFL researchers developed a new to manipulate excitons valleys

Researchers from EPFL's Laboratory of Nanoscale Electronics and Structures (LANES) developed a new way to control the valley properties of excitons and change the polarization of the light they generate.

Excitons, or electron and electron hole pairs, are created when an electron absorbs light and moves into a higher energy band. To research the excitons, the researchers used a material made from tungsten diselenide (WSe2) and molybdenum diselenide (MoSe2), and a circular polarized laser that was focused on the film.

Researchers develop a graphene-based topological valley valve

Researchers from Penn State University developed a topological valley valve, which controls electron flow. Using electron "beam splitters", the researchers achieved high-level of electron control.

Using bilayer graphene, the researcher created electron waveguides created by gates defined with extreme precision using state-of-the-art electron beam lithography.By controlling the topology of the waveguides (the valley-momentum locking of the electrons), the researchers can control electron flow.

Researchers find that electrons in Bismuth prefer to stay in one specific valley out of the six available ones

Researchers from Princeton University observed that electrons in bismuth prefer to crowd into one valley rather than distributing equally into the six available valleys. This behavior creates a type of electricity called ferroelectricity, which involves the separation of positive and negative charges onto opposite sides of a material.

Elliptical orbits of bismuth surface electrons in a large magnetic field

The finding confirms that ferroelectricity arises naturally on the surface of bismuth when electrons collect in a single valley. This behavior could be exploited in future Valleytronics devices. The existence of six valleys in bismuth raises the possibility of distributing information in six different states.

Researchers use polarized laser to switch valley states in an extremely fast way

Researchers from the University of Michigan, the University of Marburg and the University of Regensburg used circularly polarized infrared laser pulses to move electrons between valleys in a 2D material made of Tungsten and Selenium in a honeycomb lattice (similar to graphene).

These laser pulses are extremely short - just a few femtoseconds long, which results in extremely fast data switching. The researchers say that such "lightwave" computing could be millions of times faster than current computers, and be used to develop quantum computing architectures.

SnS is found to be a promising valleytronics material

Researchers from Berkeley Lab discovered that Tin(II)-Sulfide (SnS) is a promising valleytronics material as its valleys have different shapes and responses to different polarizations of light. This property means that in SnS it is easy to read valleytronics data bits.

SnS Valleys respond to light polarization (image)

The researchers have shown that SnS is able to absorb different polarizations of light and then selectively re-emit light of different colors at different polarizations. In such a material, it is possible to concurrently access both the usual electronic and valleytronic degrees of freedom.